IGBTs Transistor

IGBTs Transistor
IGBTs Transistor
Product Code : 2DI150M-050
Product Description

Being a distinguished company in this domain, we are engaged in offering the finest quality IGBTs Transistor to widely scattered clients. Our provided transistor behaves essentially as a MOSFET from the input side. This Transistor is a three-terminal power semiconductor device which acts as an electronic switch for combining the high efficiency and fast switching. Also,  IGBTs Transistor is known for switching the electric power to variable frequency drives, electric cars and variable speed refrigerator.

Features:

  • It is available with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor gate structure without regenerative action
  • Capable of operating over an extended current range
  • Combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors


 

 

IGBTs Transistor

Feature   

1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function  (3 Times Rated Current)
4. Igbt Is Three-Terminal Power Semiconductor Device
5. High Frequency Operation

Application   

1. Ac Drive Invert
2. Control
3. Ups, Uninterruptible Power Supply
4. Welding Power Supplies

Being a distinguished company in this domain, we are engaged in offering the finest quality IGBTs Transistor to widely scattered clients. Our provided transistor behaves essentially as a MOSFET from the input side. This Transistor is a three-terminal power semiconductor device which acts as an electronic switch for combining the high efficiency and fast switching. Also,  IGBTs Transistor is known for switching the electric power to variable frequency drives, electric cars and variable speed refrigerator.

Features:

  • It is available with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor gate structure without regenerative action
  • Capable of operating over an extended current range
  • Combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors


 

 

IGBTs Transistor

Feature   

1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function  (3 Times Rated Current)
4. Igbt Is Three-Terminal Power Semiconductor Device
5. High Frequency Operation

Application   

1. Ac Drive Invert
2. Control
3. Ups, Uninterruptible Power Supply
4. Welding Power Supplies

Contact Us

7245, 2/F, 142building, Zhuanchang North, tongzhou district, Beijing, Beijing, 101121, China
Phone :86-10-62543989